Atomic-scale nanofacet structure in semipolar ð20 2 1Þ and ð20 21Þ InGaN single quantum wells

Carrier redistribution between different potential sites in semipolar ð20 21Þ InGaN quantum wells studied by near-field photoluminescence

Near-field investigation of spatial variations of ð20 2 1Þ InGaN quantum well emission spectra

Scanning near-field optical spectroscopy was applied to semipolar ð20 2 1Þ InGaN/GaN quantum wells (QWs) to evaluate spatial homogeneity of QW band gap and its dependence on the growth conditions. In the most uniform QW, photoluminescence (PL) spectra were found to be narrow with small peak wavelength and spectral width variations. A QW grown at reduced temperature showed sub-micrometer size PL...

Valence band states and polarized optical emission from nonpolar and semipolar III–nitride quantum well optoelectronic devices

Nonpolar and semipolar III–nitride quantum wells (QWs) and devices have been extensively studied due to their unique valence band (VB) structure and polarized optical emission. Unlike conventional c-plane oriented III–nitride QWs, the low crystal symmetry and unbalanced biaxial stress in nonpolar and semipolar QWs separates the topmost VBs and gives rise to polarized optical emission. Since the...

Stacking faults and interface roughening in semipolar ( 20 2 ̄ 1 ̄ ) single InGaN quantum wells for long wavelength emission

Role of strain in polarization switching in semipolar InGaN/GaN quantum wells

The effect of strain on the valence-band structure of (1122) semipolar InGaN grown on GaN substrates is studied. A k·p analysis reveals that anisotropic strain in the c-plane and shear strain are crucial for deciding the ordering of the two topmost valence bands. The shear-strain deformation potential D6 is calculated for GaN and InN using density functional theory with the Heyd-ScuseriaErnzerh...